Manufacturer:Fairchild Semiconductor Product Category:IGBT Transistors RoHS: Details Package / Case:TO-3P Collector- Emitter Voltage VCEO Max:1200 V Collector-Emitter Breakdown Voltage:1200 V Collector-Emitter Saturation Voltage:2.4 V Maximum Gate Emitter Voltage:20 V Continuous Collector Current Ic Max:24 A Gate-Emitter Leakage Current: /- 100 nA Power Dissipation:200 W Packaging:TUBE Configuration:Single Mounting Style:Through Hole仙童最专业的代理商
