DESCRIPTION·Collector–Emitter Breakdown Voltage—
: V(BR)CEO= 120V(Min.)
·DC Current Gain—
: hFE= 750(Min)@ IC= 1.5A
·Complement to Type BD684
APPLICATIONS
·Designed for use as output devices in complementary
general-purpose amplifierapplications.
ABSOLUTE MAXIMUM RATINGS(T
a=25
℃)SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 140 | V |
VCEO | Collector-Emitter Voltage | 120 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 4 | A |
IB | Base Current | 0.1 | A |
PC | Collector Power Dissipation TC=25℃ | 40 | W |
Ti | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance, Junction to Case | 3.13 | ℃/W |
ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 50mA; IB= 0 | 120 | | V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 1.5A; IB= 6mA | | 2.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= 1.5A;VCE= 3V | | 2.5 | V |
ICEO | Collector Cutoff Current | VCE= 120V;IB= 0 | | 0.5 | mA |
ICBO | Collector Cutoff Current | VCB= 140V;IE= 0 VCB= 140V;IE= 0;TC= 100℃ | | 0.2 2.0 | mA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 | | 2.0 | mA |
hFE | DC Current Gain | IC= 1.5 A ; VCE= 3V | 750 | | |
