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| | | | | | | | LL4148 |
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| SWITCHING DIODE | | | REVERSE VOLTAGE:75 VOLTS | |
| | | | | | CURRENT:0.15 AMPERES | |
| FEATURES | | | | | | | |
| · Silicon epitaxial planar diode | | Mini-MELF | | | |
| · High speed switching diode | | | | | | |
| · 500mV power dissipation | | | | | | |
| · These diodes are also available in glass case | | | | | | 0.063(1.6) |
| Mini-MELF,SOD-323,SOT-323 | | | | | | 0.055(1.4) |
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| | | | | | | | | 0.019(0.48) |
| MECHANICAL DATA | | | 0.142(3.6) | | 0.011(0.28) |
| Case:DO-35,Glass Case | | 0.134(3.4) | |
| Polarity: Color band denotes cathode | | | | | | inch(mm) |
| Weight: 0.029 gram | | | | | | | |
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| MAXIMUM RATIONGS AND ELECTRICAL CHARACTERISTICS |
| Ratings at 25℃ ambient temperature unless otherwise specified. |
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| MAXIMUN RATINGS | | | | | | |
| Parameters | Symbols | Value | UNITS |
| Reverse Voltage | VR | 75 | V |
| Peak Reverse Voltage | VRM | 100 | V |
| Average Forward Rectified Current Half Wave Rectification with Resistive Load at Tamb=25 ℃ and f≥50HZ | Io | 150 | mA |
| Forward Surge Current | IFSM | 500 | mA |
| Power Dissipation | Ptot | 5001) | mW |
| Junction Temperature | TJ | 175 | ℃ |
| Storage Temperature Range | TsTG | -65---+175 | ℃ |
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| ELECTRICAL CHARACTERISTICS | | | | | | |
| Parameters | Symbol | MIN | MAX | UNITS |
| Forward Voltage at IF=100mA | VF | | 1 | V |
| Leakage Current at VR=20V | IR | | 25 | nA |
| at VR=75V | IR | | 5 | μA |
| at VR=20V TJ=150℃ | IR | | 50 | μA |
| Voltage Rise when Switching ON Tested with 50mA pulses tp=0.1us.Rise Time<30ns.fp=5 to 100HZ | Vfr | | 2.5 | V |
| Capacitance at VF=VR=0V,f=1MHZ | Ctot | | 4 | pF |
| Reverse Recovery Time=IF=10mA,VR=6V,IR=1mA,RL=100Ω | trr | | 4 | ns |
| Thermal Resistance Junction to Ambient | RθJA | | 3501) | K/W |
| Rectification Efficiency at 100MHZ,VFR=2V | nV | 0.45 | | |
| 1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature | | |
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