FM25V02— 铁电256K bit系列,3V F-RAM内存

256K bit非易失性铁电存储器

• Organized as 32K x 8 bits
• High Endurance 100 Trillion (1e14) Read/Writes
• 10 year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

SPI周边有非常快的串行接口

 • Up to 40 MHz frequency
• Direct hardware replacement for Serial Flash
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

设备ID
• Device ID reads out Manufacturer ID & Part ID

低电压、低功耗运行
• Low Voltage Operation 2.0V to 3.6V
• 90 μA Standby Current (typ.)
• 5 μA Sleep Mode Current (typ.)

工业标准配置
• Industrial Temperature -40° C to +85° C
• Grade 3 AEC-Q100 Qualified (SOIC only)
• 8-pin "Green"/RoHS SOIC Package
• 8-pin "Green"/RoHS TDFN Package

订购信息
• FM25V02-G: Device ID ("Green"/RoHS SOIC)
• FM25V02-GTR: Device ID ("Green"/RoHS SOIC, Tape & Reel)
• FM25V02-DG: Device ID ("Green"/RoHS TDFN)
• FM25V02-DGTR: Device ID ("Green"/RoHS TDFN, Tape & Reel)

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