深圳立维创展科技优势代理CREE射频微波元器件，CGH系列GaN HEMTs、CMPA系列GaN HEMTs Power Amplifier MMICs功放管。北美原厂货源，优势价格，部分型号货期1-2周。

CGH系列：CGH60008D、CGH60015D、CGH60030D、CGH60060D、CGH60120D、CGHV1J006D、CGHV1J025D、CGHV1J070D、CGH09120F、CGH21120F、CGH21240F、CGH25120F、CGH27015、CGH27030、CGH27060、CGH31240、CGH35015、CGH35030、CGH35060F1/P1、CGH35060F2/P2、CGH35240、CGH40006P、CGH40006S、CGH40010、CGH40025、CGH40035、CGH40045、CGH40090PP、CGH40120F、CGH40120P、CGH40180PP、CGH55015F1/P1、CGH55015F2/P2、CGH55030F1/P1、CGH55030F2/P2

CMPA系列：CMPA0060002D、CMPA0060025D、CMPA2060025D、CMPA2560025D、CMPA0060002F、CMPA0060025F、CMPA2560025F

公司热卖产品CGH40010F、CGH40045F、CGH40006P、CMPA0060002D、CMPA0060025D​、CMPA2560025D​、CGH40090PP、CGH40120F

10 W, RF Power GaN HEMT

Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down, flange and solderdown, pill packages.

主要特性:

•     Up to 6 GHz Operation

•     16 dB Small Signal Gain at 2.0 GHz

•     14 dB Small Signal Gain at 4.0 GHz

•     13 W typical PSAT

•     65 % Efficiency at PSAT

•     28 V Operation

产品应用：

•     Radar

•     Broadband Amplifiers

•     UAV & Data Link

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms