【供应 CREE CGHV1J025D 25W放大器现货库存】价格_厂家

型号

CGHV1J025D

品牌

CREE

材质

氮化镓

类型

氮化镓裸芯片

标称频率

18000MHz

负载谐振电阻

20Ω

负载电容

10pF

Cree是碳化硅 (SiC) 和氮化镓 (GaN) 晶片及 RF 通信设备的供应商。典型应用包括

双通道私人电台
宽带放大器
蜂窝基础设施
测试仪器
适于 OFDM、W CDMA、Edge、CDMA 波形的 A 类、AB 类线性放大器

Cree RF 器件尤其适用于高功率通信，这得益于我们所使用的碳化硅 (SiC) 材料。

SiC 具备的固有优势使得宽带放大器能够用于 UHF、L 频段和 S 频段应用。这些特性包括

高导热性
高击穿电场
高饱和电子漂移速度
高功率密度（每单位栅范围功率）

这些特点使得 GaN HEMT 成为多倍频程应用中功率 FET 的理想之选，可用于十倍频程带宽功率放大器。

深圳市立维创展科技有限公司与Cree原厂直接签约代理销售其全系列射频通信用元器件，可提供COC文件和原厂提供的一切技术与服务支持。一手货源，货期与价格独具优势。

CGHV1J025D 25-W, 18.0-GHz, GaN HEMT Die

Cree’s CGHV1J025D is a high-voltage, gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.

Features

17 dB Typ. Small Signal Gain at 10 GHz
60% Typ. PAE at 10 GHz
25 W Typical Psat
40 V Operation
Up to 18 GHz Operation

Applications

Broadband Amplifiers
Radar
Satcom & Point-to-Point Radio
Telecom

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Related Documents Data Sheets Version Last Updated RF Application Notes Version Last Updated RF Product Ecology Version Last Updated Sales Terms Version Last Updated S-parameter Version Last Updated Technical Papers & Articles Version Last Updated

CGHV1J025D	1.0	03 Apr 2014
Eutectic Die Attach Procedure	A	30 Apr 2012
GaN HEMT Biasing Circuit with Temperature Compensation	B	07 Aug 2012
Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model	C	30 Apr 2012
Thermal Performance Guide for High Power SiC MESFET and GaN HEMT Transistors	A	30 Apr 2012
RoHS Declaration: HEMT Chips Product ecology	RS4001112012	09 Nov 2012
Sales Terms and Conditions
CGHV1J025D S-parameters, VDS = 40 V, 120 mA
CGHV1J025D S-parameters, VDS = 40 V, 240 mA
A Review of GaN on SiC HEMTs and MMICs by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble	Design	01 Jun 2012
Application of Non Linear Models in a range of challenging GaN HEMT Power Amplifier Designs by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood	Design	16 Jun 2008