A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Features and benefits

• Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)
• Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
• Suitable for CW UHF and ISM applications
• High power gain
• High efficiency
• Designed for broadband operation (470 MHz to 860 MHz)
• Internal input matching for high gain and optimum broadband operation