【富士通高压高功率GaN-HEMT，SGN26H080M1H，0.7-2.7GHz】价格_厂家

品牌

富士通SEI

型号

SGN26H080M1H

类型

其他

加工定制

是

电压

50V

功率

49.3dBm

富士通（住友，Eudyna，SEI）高可靠性高压高功率氮化镓HEMT，SGN26H080M1H。工作电压VDS为50V，功率高达49.3dBm。

SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This new product is ideally suited for use from 0.7 to 2.7GHz W-CDMA & LTE design requirements as it offers high gain, long term reliability and ease of use.