【富士通高压高功率GaN-HEMT，SGN26H181M1H，2.6GHz LTE】价格_厂家

品牌

富士通SEI

型号

SGN26H181M1H

类型

其他

加工定制

是

电压

50V

功率

52.2 dBm

富士通（住友，Eudyna，SEI）高可靠性高压高功率氮化镓GaN HEMT，SGN26H181M1H。工作电压VDS为50V，功率高达49.3dBm。

SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This new product is ideally suited for use from 2.6GHz LTE design requirements as it offers high gain, long term reliability and ease of use.