电气特性 | (Tj=25℃) | | | | | | | | | |
参数 | | | 描述 | | | Min. | Typ. | | Max. | Unit | | Test Condition | |
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V(BR)DSS | | 漏源击穿电压 | 650 | — | | — | V | | VGS =0V, ID =250µA | |
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RDS(ON) | | 静态漏源 | — | 0.75 | | 0.85 | Ω | VGS =10V, ID =5.0A** | |
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VGS(th) | | 栅极阈值电压 | | | 2 | — | | 4 | V | | VDS=VGS, ID =250μA | |
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IDSS | | 漏电流源 | — | — | | 1 | μA | | VDS =650V, VGS =0V | |
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IGSS | | 门体漏电流 | | | — | — | | ±100 | nA | | VDS =0V, VGS =±30V | |
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TJ, TSTG | | 操作和储存温度范围 | | -55℃ to 150℃ Max | | |
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力学数据 | | | | | | | | | | | |
核心面积; | | 3.993 ×5.058 | | | mm2 | | | | | 切屑图 | |
门垫大小 | | 0.31 × 0.52 | | | | | | | | (排除划线) | |
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隶线尺寸 | 100 | | | μm | | | | | | | | |
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晶圆diameter | | 100 | | | mm | | | | | | | | |
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晶圆厚度 | 230 | | | μm | | | | | | | | |
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平焊位置; | | 90 | | | deg | | | | | | | | |
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粗略估计 | | 430 | | | | | | | | | |
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源金属化 | | Al, Si,Cu | | | | | | | | | |
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排水金属化 | | V, Ni, Ag | | | | | | | | | |
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推荐d | | 储存在原始容器中,在干燥的氮气中, | | | | | | |
贮存环境 | <在23℃±3℃常温6个月 > | | | | | | |
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* 电气特性的报告参考包装的一部分(220)并不能保证模具的销售形式。客户包装材料的变化,尺寸和工艺可能AF参数性能的影响.
* F/T的RDS(ON)是一个估计值的赤裸的死,实际结果将取决于客户的包装材料和尺寸.