Description
The 1214S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The
complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other
applications.
General Features
●P-Channel
VDS =-18V,ID =-11.5A
RDS(ON) < 17.2mΩ @ VGS=-4.5V
RDS(ON) < 26mΩ @ VGS=-2.5V


