GaAs FET和pHEMT器件
砷化镓场效应管/ pHEMTs射频特性（25°C时的典型性能）
超线性，高动态范围，低相位噪声
GaAs工艺已被批准用于空间应用，并具有可靠的可靠性
商业，工业，军事和航天等级
按照MIL-PRF-38534标准评估100％晶圆键合拉伸，模切，晶圆直流烙印和烘烤测试
装运数据记录的100％模具探针测试
出货前视觉效果100％（1级，3级或4级）
100％Idss匹配以提供性能一致性
RF样品测试能力可应要求提供
标准和自定义设备规格
提供高可靠性和可用空间可选的屏蔽选项
RoHS（无铅）符合标准的产品
低噪音pHEMT器件：
Model
S-ParameterGate Width / Length umN.F. @12Ghz Typ dBN.F. @4GHz Typ dBGa @ N.F @12GHz Typ/Min dBGa @ N.F @4GHz Typ/Min dBP-1dB @12GHz Typ dBm
| MwT-LN240 | 240/.15 | 0.5 | 0.2 | 10 / -- | 13 | 16 |
| MwT-LN300 | 300/.15 | 0.6 | 0.2 | 10 / -- | 13 | 16 |
| MwT-LN600 | 600/.15 | 0.5 | 0.2 | 9 / 8 | 12 | 20 |
pHEMT 毫米波应用和功率pHEMT器件
以下是AlGaAs / InGaAs异质结pHEMT（假晶高电子迁移率晶体管）器件，适合用于毫米波功率和增益应用。
Model
S-ParameterPackage Available Sealed / HermeticGate Width / Length umGate Layout MethodGate Drain Source Bond Pads QtyChip Thick-ness & VIA Hole mil, y/nS.S. Gain @12GHz Typ/Min dBN.F. @12Ghz Typ/Max dBGa @ N.F @12GHz Typ/Min dBP-1dB @12GHz Typ/Min dBmIP3 @12GHz Typ dBmNominal Chip Size um • umIdeal Circuit
| MwT-PH4 | 70, 73 / 71 | 180/0.3 | single stripe | 1, 1, 2 | 5, no | 11.0 / 10.0 | 1.2 | 13.0/12.0 | 20.0/18.0 | 356 • 241 | Osc & Amp | |
| MwT-PH5 | 300/0.3 | single stripe | 1, 1, 2 | 4, no | 18.0 / 15.0 | 2.0 / - | 12.0/ - | 20.0/18.0 | 406 • 241 | Power Amp | ||
| MwT-PH7 | 70, 73 / 71 | 250/0.3 | single stripe | 2, 1, 2 | 4, no | 13.5 / 12.0 | 24.0/22.0 | 356 • 241 | Medium pow | |||
| MwT-PH8 | 71 | 1200/0.3 | Interdigit | 2, 2, 3 | 4, no | 10.0 / 9.0 | 30.0/29.0 | 673 • 305 | Medium pow | |||
| MwT-PH9 | 70, 73 / 71 | 750/0.3 | Interdigit | 1, 1, 2 | 4, no | 10.0 / 9.0 | 27.0/26.0 | 419 • 292 | Power Amp | |||
| MwT-PH11 | 71 | 2400/0.3 | Interdigit | 2, 2, 3 | 4, no | 9.0 / 7.0 | 32.0/30.0 | 42 | 775 • 343 | Power Amp | ||
| MwT-PH15 | 70, 73 / 71 | 630/0.3 | single stripe | 3, 2, 5 | 4, no | 12.0 / 10.0 | 28.5/27.0 | 775 • 241 | Medium pow | |||
| MwT-PH16 | 71 | 900/0.3 | single stripe | 6, 2, 7 | 4, no | 11.5 / 10.0 | 30.0/28.5 | 1067 • 241 | Medium pow | |||
| MwT-PH16A | 1600/0.25 | Interdigit | 4, 4, 5 | 4, no | 11.0 / 9.5 | 31.0 / 29.0 | 1126 • 330 | Medium pow |
高功率，高线性应用
适用于商业，军事，高安全性空间应用。
Model
S-ParameterPackage Available Sealed / HermeticGate Width / Length umGate Layout MethodGate Drain Source Bond Pads QtyChip Thick-ness & VIA Hole mil, y/nS.S. Gain @12GHz Typ/Min dBN.F. @12Ghz Typ/Max dBGa @ N.F> @12GHz Typ/Min dBmP-1dB @12GHz Typ/Min dBmIP3 @12GHz Typ dBmNominal Chip Size um • umIdeal Circuit
| MwT- 11 | 71 | 2400/0.3 | Interdigit | 2, 2, 3 | 4, no | 9.0 / 7.0 | 30.0/28.0 | 775 • 343 | Power Amp | |||
| MwT-17Q3 | QFN | 2400/0.8 | Interdigit | 4, 4, 5 | 4, no | 18.0/16.0(1) | 1.5(1) | 28.0/27.0 | 46 | 1130 • 279 | Power Amp |
宽带，低噪声系数
推荐用于以低噪声系数为驱动参数的多倍频程应用。
MwT-A9设计用于高增益和低噪声系数都是关键规格的应用。
Model
S-ParameterPackage Available Sealed / HermeticGate Width / Length umGate Layout MethodGate Drain Source Bond Pads QtyChip Thick-ness & VIA Hole mil, y/nS.S. Gain @12GHz Typ/Min dBN.F. @12Ghz Typ/Max dBGa @ N.F @12GHz Typ/Min dBP-1dB @12GHz Typ/Min dBmIP3 @12GHz Typ dBmNominal Chip Size um • umIdeal Circuit
| MwT-4 | 70, 73 / NA | 180/0.3 | single stripe | 1, 1, 2 | 5, no | 9.0 / 8.0 | 1.5 / 1.8 | 9.0 / 8.0 | 14.0/13.0 | 356 • 241 | Osc & Amp | |
| MwT-7 Nonlinear Model | 70, 73 / NA | 250/0.3 | single stripe | 2, 2, 2 | 5, no | 10.5 / 10.0 | 2.0 / - | 8.0 / - | 20.0/18.0 | 356 • 241 | BA/SE Amp | |
| MwT-LP7 | 70, 73 / NA | 250/0.3 | single stripe | 2, 2, 2 | 5, no | 10.5 / 10.0 | 2.0 / - | 8.0 / - | 20.0/18.0 | 356 • 241 | Oscillator | |
| MwT-A9 | 84, 70, 73 / 71 | 750/0.3 | single stripe | 1, 1, 2 | 5, no | 9.5 / 8.5 | 1.8 / - | 6.5 / 6.0 | 25.5/23.0 | 419 • 292 | FB Amp | |
| MwT-A989 | sot89 | 750/0.5 | Interdigit | 1, 1, 2 | 4, no | 17.0/15.0(1) | 0.9 (1) | 25.0/23.0 | 40 | 419 • 292 | Power Amp | |
| MwT-A989SB | sot89 | 750/0.5 | Interdigit | 1, 1, 2 | 4, no | 17.0/15.0(1) | 0.9(1) | 25.0/23.0 | 40 | 419 • 292 | Power Amp |
宽带，高增益
推荐用于Max增益为驱动参数的多倍频程应用。
Model
S-ParameterPackage Available Sealed / HermeticGate Width / Length umGate Layout MethodGate Drain Source Bond Pads QtyChip Thick-ness & VIA Hole mil, y/nS.S. Gain @12GHz Typ/Min dBN.F. @12Ghz Typ/Max dBGa @ N.F @12GHz Typ/Min dBP-1dB @12GHz Typ/Min dBmIP3 @ 12GHz Typ dBmNominal Chip Size um • umIdeal Circuit
| MwT-1 | 70, 73 / 71 | 630/0.3 | single stripe | 1, 1, 2 | 5, no | 10.0 / 9.0 | 2.0 / - | 7.0 / - | 24.0 / 23.0 | 775 • 241 | FB Amp | |
| MwT-3 | 70, 73 / 71 | 300/0.3 | single stripe | 1, 1, 2 | 5, no | 11.0 / 10.0 | - / - | - / - | 21.0 / 20.0 | 406 • 241 | BA Amp | |
| MwT-5 | NA / NA | 2•300/0.3 | dual gate | 3, 1, 2 | 5, no | 13.0 / 12.0 | 3.5 / - | 11.0 / - | 19.0 / 15.0 | 406 • 241 | Buffer Amp | |
| MwT-7 Nonlinear Model | 70, 73 / NA | 250/0.3 | single stripe | 2, 2, 2 | 5, no | 10.5 / 10.0 | 2.0 / - | 8.0 / - | 20.0 / 18.0 | 356 • 241 | BA/SE Amp |
宽带，中等功率
以最佳功率输出为驱动参数的多倍频应用推荐使用以下设备。
Model
S-ParameterPackage Available Sealed / HermeticGate Width / Length umGate Layout MethodGate Drain Source Bond Pads QtyChip Thick-ness & VIA Hole mil, y/nS.S. Gain @12GHz Typ/Min dBN.F. @12Ghz Typ/Max dBGa @ N.F @12GHz Typ/Min dBP-1dB @12GHz Typ/Min dBmIP3 @12GHz Typ dBmNominal Chip Size um • umIdeal Circuit
| MwT-1 | 70, 73 / 71 | 630/0.3 | single stripe | 1, 1, 2 | 5, no | 10.0 / 9.0 | 2.0 / - | 7.0 / - | 24.0/23.0 | 775 • 241 | FB Amp | |
| MwT-2 | 70, 73 / 71 | 630/0.3 | single stripe | 2, 2, 3 | 5, no | 8.5 / 8.0 | - / - | - / - | 24.5/23.0 | 775 • 241 | BA Amp | |
| MwT-3 | 70, 73 / 71 | 300/0.3 | single stripe | 1, 1, 2 | 5, no | 11.0 / 10.0 | - / - | - / - | 21.0/20.0 | 406 • 241 | BA Amp | |
| MwT-6 | - / 71 | 900/0.3 | Interdigit | 2, 2, 3 | 5, no | 8.0 / 7.5 | - / - | - / - | 27.0/26.0 | 559 • 292 | FB/DA Amp | |
| MwT-7 Nonlinear Model | 70, 73 / NA | 250/0.3 | single stripe | 2, 2, 2 | 5, no | 10.5 / 10.0 | 2.0 / - | 8.0 / - | 20.0/18.0 | 356 • 241 | BA/SE Amp | |
| MwT-8 | 71 | 2400/0.3 | Interdigit | 2, 2, 3 | 4, no | 7.5 / 7.0 | 28.0/27.0 | 673 • 305 | Power Amp | |||
| MwT-9 | 70, 73 / 71 | 750/0.3 | Interdigit | 1, 1, 2 | 5, no | 9.0 / 8.0 | - / - | - / - | 26.0/25.0 | 419 • 292 | FB Amp | |
| MwT-15 | - / - | 630/0.3 | single stripe | 4, 2, 5 | 5, no | 9.5 / 8.5 | - / - | - / - | 25.0/23.0 | 775 • 241 | Amplifier | |
| MwT-16 | - / - | 900/0.3 | single stripe | 6, 2, 7 | 5, no | 8.5 / 7.5 | - / - | - / - | 27.0/26.0 | 1067 • 241 | BA Amp | |
| MwT-17 Nonlinear Model | 89 / 71 | 2400/0.8 | Interdigit | 4, 4, 5 | 5, no | 7.0 / 6.0 | (2) | 29.5/28.5 | 45/- | 1130 • 279 | BA/FB Amp | |
| MwT-1789 | sot89 | 2400/0.8 | Interdigit | 4, 4, 5 | 4, no | (4) | 16.0(1) | 28 | 46 | 1130 • 279 | Low Noise | |
| MwT-1789SB | sot89 | 2400/0.8 | Interdigit | 4, 4, 5 | 4, no | (3) | 18.0(1) | 28 | 44 | 1130 • 279 | Power Amp |
窄带功率应用
推荐用于Max功率输出和增益为驱动参数的窄带应用。 这些器件可以偏置在5伏特用于无线通信应用。
Model
S-ParameterPackage Available Sealed / HermeticGate Width / Length umGate Layout MethodGate Drain Source Bond Pads QtyChip Thick-ness & VIA Hole mil, y/nS.S. Gain @12GHz Typ/Min dBN.F. @12GHz Typ/Max dBGa @ N.F @12GHz Typ/Min dBP-1dB @12GHz Typ dBmIP3 @12GHz Typ dBmNominal Chip Size um - umIdeal Circuit
| MwT-2 | 70, 73 / 71 | 630/0.3 | single stripe | 2, 2, 3 | 5, no | 8.5 / 8.0 | - / - | - / - | 24.5/23.0 | 775 • 241 | BA Amp | |
| MwT-3 | 70, 73 / 71 | 300/0.3 | single stripe | 1, 1, 2 | 5, no | 11.0 / 10.0 | - / - | - / - | 21.0/20.0 | 406 • 241 | BA Amp | |
| MwT-6 | - / 71 | 900/0.3 | Interdigit | 2, 2, 3 | 5, no | 8.0 / 7.5 | - / - | - / - | 27.0/26.0 | 559 • 292 | FB / DA Amp | |
| MwT-8 | 71 | 2400/0.3 | Interdigit | 2, 2, 3 | 4, no | 7.5 / 7.0 | 28.0/27.0 | 673 • 305 | Power Amp | |||
| MwT-9 | 70, 73 / 71 | 750/0.3 | Interdigit | 1, 1, 2 | 5, no | 9.0 / 8.0 | - / - | - / - | 26.0/25.0 | 419 • 292 | FB Amp | |
| MwT-17 Nonlinear Model | 89 / 71 | 2400/0.8 | Interdigit | 4, 4, 5 | 5, no | 7.0 / 6.0 | (2) | 29.5/28.5 | 45 / - | 1130 • 279 | BA / FB Amp |
窄带，低噪声应用
推荐用于低噪声和增益为驱动参数的窄带应用。 这些器件可以偏置在5伏特用于无线通信应用。
Model
S-ParameterPackageGate Width / Length umGate Layout MethodGate Drain Source Bond Pads QtyChip Thick-ness & VIA Hole mil, y/nS.S. Gain @12GHz Typ/Max dBN.F. @12Ghz Typ/Max dBGa @ N.F @12GHz Typ/Min dBP-1dB @12GHz Typ dBmIP3 @12GHz Typ dBmNominal Chip Size um - umIdeal Circuit
| MwT-1 | 70, 73 / 71 | 630/0.3 | single stripe | 1, 1, 2 | 5, no | 10.0 / 9.0 | 2.0 / - | 7.0 / - | 24.0/23.0 | 775 • 241 | FB Amp | |
| MwT-4 | 70, 73 / NA | 180/0.3 | single stripe | 1, 1, 2 | 5, no | 9.0 / 8.0 | 1.5 / 1.8 | 9.0 / 8.0 | 14.0/13.0 | 356 • 241 | Osc & Amp | |
| MwT-A9 | 84, 70, 73 / 71 | 750/0.3 | single stripe | 1, 1, 2 | 5, no | 9.5 / 8.5 | 1.8 / - | 6.5 / 6.0 | 25.5/23.0 | 419 • 292 | FB Amp | |
| MwT-A989 | sot89 | 750/0.5 | Interdigit | 1, 1, 2 | 4, no | 17.0/15.0 (1) | 0.9 (1) | 25.0/23.0 | 40 | 419 • 292 | Power Amp | |
| MwT-A989SB | sot89 | 750/0.5 | Interdigit | 1, 1, 2 | 4, no | 17.0/15.0ÿ(1) | 0.9 (1) | 25.0/23.0 | 40 | 419 • 292 | Power Amp |
SB =自偏置（1）@ 2.0GHz，（2）噪声系数= 0.8dB @ 0.9Ghz，（3）噪声系数= 3.0dB @ 2.0Ghz，（4）噪声系数= 1.3dB @ 2.0Ghz，（5） ）@ 4.0Ghz
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