The NP6661D6 uses advanced trench technology to provide excellent Ros(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

    特点

        N-channel:

Vos =30V,ID =10A​

Ros(ow)=8mQ (typical) @ VGS=10V​

Ros(oN=11.5mQ (typical) @ VGS=4.5V​

      P-Channel:

Vos =-30V,ID =-10A​

Ros(ow= 16mQ (ypical) @ VGS=-10V​

Ros(oN=22mQ (typical) @ VGS=-4.5V​

Excellent gate charge x Ros(on) product(FOM)​

Very low on-resistance Ros/oN)​

150 °C operating temperature​

Pb-free lead plating​

100% UIS tested

     应用​

Pch+Nch ComplementagyMOSFET for DC-FAN​

H-Bridge application​