The JXP3N10MRG uses Shield Gate Trench
technology that is uniquely optimized to provide
the most efficient high frequency switching
performance. Both conduction and switching
power losses are minimized due to an extremely
low combination of Ros/ON) and Qg. This device is
ideal
for
high-frequency switching and
synchronous rectification.

         特点

lo =3A,Vos=100V
Ros(oN(Typ.)= 100mQ@Vcs=10V
Ros(oN(Typ.)= 130mQ@Vcs=4.5V
High density cell design for ultra low Ros(ON)
Fully characterized avalanche voltage and
current
uniformity with high EAs
Excellent package for good heat dissipation
Special process technology for high ESD
capability

        应用

PWM applications
L oad switch