The JXP1N2OMRG uses advanced trench
technology to provide excellent Ros(ON), low gate
charge and high density cell Design for ultra low
on-resistance. This device is suitable for use as
a load switch or in PWM applications.

        特点

lo =1 A,Vos=200V
Ros(oN)(Typ.)=1.65Q@Vcs=10V
Ros(oN(Typ.)=1 .85Q @Vcs=4.5V
High density cell design for ultra low Ros(ON)
Fully characterized avalanche voltage and
current
uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD
capability

       应用

PWM applications
Load switch

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