The LPM3414 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching is needed.

Applications
 

 Portable Media Players/MP3 players

 Cellular and Smart mobile phone

 LCD

 DSC Sensor

 Wireless Card

Features
 

20V/3A, RDS(ON)＜62mΩ(max.)@VGS=4.5V

 20V/2.5A, RDS(ON)＜86mΩ(max.)@VGS=2.5V

 Super high density cell design for extremely low

RDS(ON)

 SOT23 Package