The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications, notebook computer power management and other battery powered circuits where it is high-side switching.

Applications
 

 Portable Media Players

 Cellular and Smart mobile phone

 LCD

 DSC Sensor

 Wireless Card

Features
 

 -30V/-3.0A, RDC(ON)=52mΩ(typ.)@VGS=-4.5V

 ■ -30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.5V

 ■ Super high density cell design for extremely low RDC(ON)

 ■ SOT23 Package