The LPM9435 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high side switching.

Applications
 

 Portable Media Players

 Cellular and Smart mobile phone

 LCD

 DSC Sensor

 Wireless Card

Features
 

 -30V/-5.8A,RDS(ON)=42mΩ(typ.)@VGS=-10V

 -30V/-4.0A,RDS(ON)=65mΩ(typ.)@VGS=-4.5V

 Super high density cell design for extremely

low RDS(ON)

 SOP8 Package