The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9029C is Pb-free and Halogen-free.

Applications
 

 Driver for Relay, Solenoid, Motor, LED etc.

 DC-DC converter circuit

 Power Switch

 Load Switch

 Charging

Features
 

 Trench Technology

 NMOS:

VNDS=20V, IND=12A

RNDS(ON) < 26mΩ @ VGS=2.5V

RNDS(ON) < 20mΩ @ VGS=4.5V

 PMOS:

VPDS=-20V, IPD=-4.5A

RPDS(ON) < 100mΩ @ VGS=-2.5V

RPDS(ON) < 68mΩ @ VGS=-4.5V

 Super high density cell design

 Extremely Low Threshold Voltage

 Small package SOP-8