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The NP1005 uses advanced trench technology and

design to provide excellent R DS(ON)
General Features
with low gate charge.
It can be used in a wide variety of applications.
 I D =7A,V DS
R
=100V
DS(ON) (Typ.)=115mΩ@V GS
R
=10V
DS(ON) (Typ.)=180mΩ@V GS
 High density cell design for ultra low R
=4.5V
 Fully characterized avalanche voltage and current
DS(ON) 
 Good stability and uniformity with high E
 Excellent package for good heat dissipation
AS
Application
 Power switching application
 Hard switched and high frequency circuits
 Uninterruptible power supply
Package
 SOT-23-6L