【NP100N03D6-N-G 100A/30V N沟道场效应MOS管内阻3.4】价格_厂家

品牌

NP

型号

NP100N03D6-N

类型

绝缘栅型场效应管/MOS场效应管

沟道类型

N型沟道

导电方式

增强型

适合频率

中频

材质

N-FET硅N沟道

用途

新能源，家用电器，3C数码，汽车电子，测量仪器，智能家居，网络通信，安防设备，广电教育，医疗电子，照明电子，可穿戴设备，物联网loT

漏极电流

100A

栅极电荷

41

漏源导通电阻

3.4

工作温度

-55~150

漏源电压

30V

Description

The NP100N03D6 uses Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

General Features

VDS =30V，ID =100A

RDS(ON)(Typ.)=3.4 mΩ @VGS=10V

RDS(ON)(Typ.)=5.1 mΩ @VGS=4.5V

Very low on-resistance RDS(on)

150 °C operating temperature

100% UIS tested

Application

Synchronus Rectification in DC/DC and AC/DC Converters

Industrial and Motor Drive applications