申社牌三相整流桥模块
常州瑞华电力电子器件有限公司
中国 常州
产品属性
图文详情
品牌推荐
品牌/型号
申社
应用范围
整流桥、高压硅
封装材料
金属封装
功率特性
大功率
正向工作电流
25-1500（A）
最高反向电压
2500（V）
我公司是专业生产电力半导体模块的生产厂家，提供全系列的各类型电力半导体模块。其中，三相整流桥模块系列电流可以从25A至1500A，电压由600V至2500V，外形尺寸见图。说明：
1、ID=25A~3000A, Tjm=150°C, VRRM=600V~2500V, VISO≥2.5KVRMS。
2、表中参数为模块每个整流管芯片的额定值和特性参数。ID和Rth (c-h )除外，Rth (c-h )为模块值。
3、表中Rth ( j-c )值为每一个芯片的热阻值。对于由6个芯片组成的模块，Rth ( j-c )模块=1/6 Rth ( j-c )芯片；I2t=1/2 I2FSMT，底宽t在50Hz时为10ms; VTM是在IF（AV）xπ电流下25°C时测得。
型号VRRMIRRMMaxIDTCIF(AV)IF(RMS)IFSMI2tVTMVTOrTORth( j-c )Rth(c-h )外形代号VmAA°CAAAA2*SVVmΩ°C/W°C/W MDS25600~25005258020324409701.540.8011.822.5330.10W29_8MDS35600~250053580284458016801.600.809.131.7500.10W29_8或W29_9MDS60600~250010601005078100050001.460.903.580.7490.10W40_21或W40_12MDS75600~250010751005586109059401.440.903.140.6890.10W40_12MDS100600~25001010010070110138095201.421.001.920.5380.10W70_22或W40_12MDS150600~25001015010090140181016.4x1031.520.752.730.4110.10W64_10或W70_22MDS200600~250010200100110170214022.9x1031.480.752.120.3450.05W64_10或W70_22MDS250600~250015250100130200249031x1031.450.751.720.3970.05W64_10MDS300600~250015300100160250305046.5x1031.640.801.680.2140.05W64_10MDS400600~25001540090200310342058.5x1031.580.801.250.2120.05W80_11MDS500600~250015500902503904800115.2x1031.560.751.040.1740.03W80_11或W105_13MDS600600~250020600902804405560154.6x1031.620.751.000.1500.03W105_13MDS700600~250020700903505506870236x1031.680.750.850.1160.02W105_13MDS800600~250020800854006287710297.2x1031.640.800.670.1110.02W105_13MDS900600~250030900855007859620462.7x1031.660.800.550.0880.02W105_13MDS1000600~250030100080700101013.4x103897.8x1031.740.800.430.0650.02W105_13MDS1500600~250030150080800125615.3x1031170x1031.780.750.410.0590.02W105_13MDS2000600~2500302000801000159018.9x1031786x1031.820.750.340.0440.02W105_13MDS2500600~2500402500801200188222.7x1032579x1031.850.800.280.0360.02W105_13MDS3000600~2500403000801400219826.4x1033484x1031.900.800.250.0300.02W105_13
1、ID=25A~3000A, Tjm=150°C, VRRM=600V~2500V, VISO≥2.5KVRMS。
2、表中参数为模块每个整流管芯片的额定值和特性参数。ID和Rth (c-h )除外，Rth (c-h )为模块值。
3、表中Rth ( j-c )值为每一个芯片的热阻值。对于由6个芯片组成的模块，Rth ( j-c )模块=1/6 Rth ( j-c )芯片；I2t=1/2 I2FSMT，底宽t在50Hz时为10ms; VTM是在IF（AV）xπ电流下25°C时测得。
型号VRRMIRRMMaxIDTCIF(AV)IF(RMS)IFSMI2tVTMVTOrTORth( j-c )Rth(c-h )外形代号VmAA°CAAAA2*SVVmΩ°C/W°C/W MDS25600~25005258020324409701.540.8011.822.5330.10W29_8MDS35600~250053580284458016801.600.809.131.7500.10W29_8或W29_9MDS60600~250010601005078100050001.460.903.580.7490.10W40_21或W40_12MDS75600~250010751005586109059401.440.903.140.6890.10W40_12MDS100600~25001010010070110138095201.421.001.920.5380.10W70_22或W40_12MDS150600~25001015010090140181016.4x1031.520.752.730.4110.10W64_10或W70_22MDS200600~250010200100110170214022.9x1031.480.752.120.3450.05W64_10或W70_22MDS250600~250015250100130200249031x1031.450.751.720.3970.05W64_10MDS300600~250015300100160250305046.5x1031.640.801.680.2140.05W64_10MDS400600~25001540090200310342058.5x1031.580.801.250.2120.05W80_11MDS500600~250015500902503904800115.2x1031.560.751.040.1740.03W80_11或W105_13MDS600600~250020600902804405560154.6x1031.620.751.000.1500.03W105_13MDS700600~250020700903505506870236x1031.680.750.850.1160.02W105_13MDS800600~250020800854006287710297.2x1031.640.800.670.1110.02W105_13MDS900600~250030900855007859620462.7x1031.660.800.550.0880.02W105_13MDS1000600~250030100080700101013.4x103897.8x1031.740.800.430.0650.02W105_13MDS1500600~250030150080800125615.3x1031170x1031.780.750.410.0590.02W105_13MDS2000600~2500302000801000159018.9x1031786x1031.820.750.340.0440.02W105_13MDS2500600~2500402500801200188222.7x1032579x1031.850.800.280.0360.02W105_13MDS3000600~2500403000801400219826.4x1033484x1031.900.800.250.0300.02W105_13
