H11A817B/C
Parameter | Symbol | Device | Value | Units |
TOTAL DEVICE | | | | |
Storage Temperature | TSTG | All | -55 to +150 | °C |
Operating Temperature | TOPR | All | -55 to +100 | °C |
Lead Solder Temperature | TSOL | All | 260 for 10 sec | °C |
Total Device Power Dissipation (-55°C to 50 °C) | PD | All | 200 | mW |
EMITTER | | | | |
Continuous Forward Current | IF | All | 50 | mA |
Reverse Voltage | VR | H11A617A/B/C/D H11A817/A/B/C/D | 6 5 | V |
Forward Current - Peak (1 µs pulse, 300 pps) | IF(pk) | All | 1.0 | A |
LED Power Dissipation (25°C ambient) Derate above 25°C | PD | All | 100 | mW |
1.33 | mW/°C |
DETECTOR | | | | |
Collector-Emitter Voltage | VCEO | All | 70 | V |
Emitter-Collector Voltage | VECO | H11AA814/A H11A617A/B/C/D H11A817/A/B/C/D | 6 7 6 | V |
Continuous Collector Current | IC | All | 50 | mA |
Detector Power Dissipation (25°C ambient) Derate above 25°C | PD | All | 150 | mW |
2.0 | mW/°C |
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