FEATURES 

• Enhancement-Mode MOSFET Transistors 

(IDD≅0  @ VDD=12.5V, VGG=0V) 

• Pout>30W, ηT>40%  @ VDD=12.5V, VGG=5V, Pin=50mW 

• Broadband Frequency Range: 135-175MHz 

• Low-Power Control Current IGG=1mA (typ) at VGG=5V 

• Module Size: 66 x 21 x 9.88 mm 

• Linear operation is possible by setting the quiescent drain 

current with the gate voltage and controlling the output power 

with the input power 

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联系人；何先生

 

联系电话：182-1045-0337 、010-52459918     

                    010-6492-0890

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