DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
•High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.

北京京瑞馨科技—供应全新原装正品射频模块、射频管！假一罚十！！！

联系人；何先生

网址:

联系电话：182-1045-0337 、010-6492-0890

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全新原装正品供应：

三菱（MITSUBISHI）:

   

RD100HHF1、RD70HVF1、RD70HHF1、RD60HUF1、RD45HMF1、RD30HUF1、

RD30HVF1、RD20HMF1、RD16HHF1、RD15HVF1、RD12MVP1、RD12MVS1、

RD09MUP2、RD07MVS1B、RD07MVS2、RD07MUS2B、RD06HVF1、RD06HHF1、

RD05MMP1、RD02MUS1、RD02MUS1B、RD02MUS2、RD01MUS1、RD01MUS2、

RD00HHS1、RD00HVS1等RD系列；

三菱（MITSUBISHI）:

RA60H4452M1、RA60H4047M1、RA60H1317M1A、RA60H1317M、RA55H4452M，

RA55H4047M、RA55H3847M、RA55H3340M、RA45H8994M1、RA45H7687M1、

RA45H4452M、RA45H4045MR、RA45H4047M、RA35H1516M、RA33H1516M

RA30H4452M1、RA30H4452M、RA30H4047M1、RA30H4047M、RA30H3340M、

RA30H2127M、RA30H1721M、RA30H1317M1、RA30H1317M、RA30H0608M、

RA20H8994M、RA20H8087M、RA18H1213G、RA13H8891MA、RA13H8891MB、

RA13H4452M、RA13H4047M、RA13H3340M、RA13H1317M、RA08H1317M、

RA08N1317M、RA07H4452M、RA07M4452MSA、RA07M4452M、RA07N4452M、

RA07H4047M、RA07M4047MSA、RA07M4047M、RA07N4047M、RA07M3843M、

RA07M3340M、RA07H3340M、RA07N3340M、RA07M2127M、RA07M1317MSA、

RA07M1317M、RA07H06068M、RA07M0608M、RA06H8285M、RA05H9595M、

RA05H8693M、RA03M9595M、RA03M8894M、RA03M8087M、RA03M4547MD、

RA03M4043MD、RA03M3540MD、RA02M8087MD、RA01L9595M、

RA01L8693MA等RA系列；

东芝（TOSHIBA）：
 

2SK3075(TE12L,Q)、2SK3078(TE12L,Q)、2SK3079A(TE12L,Q)、

2SK3475(TE12L,Q)、2SK3476(TE12L,Q)、2SK3756(TE12L,Q)、

 2SK4037(TE12L,Q)、2SC5066-Y(T5L,F,T)(M2)等2SC、2SK系列；    

瑞萨（RENESAS）：

   RQA0001DNS、RQA0002DNS,RQA0003DNS、RQA0004LXAQS、

RQA0005MXAQS、RQA0005QXDQS、RQA0008NXAQS、

RQA0009SXAQS、RQA0010UXAQS、RQA0010VXDQS、

RQA0011DNS、RQA0014XXAQS,RQA0014XXDQS等RQA系列；

M62363FP#TF0G、M3062LFGPGP#U3C、M3062LFGPGP#U5C等M系列

ST：

PD55003-E、PD55003S-E、PD55008-E、PD55008S-E、PD55015-E、PD55015S-E
防雷器件：
P0300ECL、P0300ECLRP1、P0720ECL等P系列

有用到的，都可以与我联系，全新原装正品，优势供应！