LGS-DP-S-50激光划片机配置表 

LGS-DP-S-50 Laser Scribing Machine

Introduction:

The new generation of Diode laser scribing machine is capable of scribing various silicon wafer, solar cell, ceramic wafer, thin metal sheet (~0.5 mm thick maximum), etc., in industries of electronics, semiconductor and solar energy, etc.. It is designed by experts with professional features, such as excellent beam quality and power stability, precise CNC worktable and efficient auto cooling system.

Equipment character:

•Friendly man-machine interface and simple software operation system

•High quality of beam, quasi base mode(Low mode), small pergence angle

•The whole sealed beam path design, ensure the long and continuous stable running of laser source, better ability to adapt to enviroment.

•Continuously working for 24 hours, long time working

•Stable running, high finished products rate of scribing process.

•Adopts international standard modular design, reasonable structure, simple and convenient to installation and maintenance.

•Reasonable configure of each system and part, High profit from each system and part.

Application and Market

•Scribing and cutting for mono-crystalline silicon, poly-crystalline silicon, amorphous-crystalline silicon, solar cell, Silicon, germanium and Gallium arsenic semiconductor materials.

Technical Parameters:

Wavelength: 1064 nm

Pump source: Diode Laser

Modulated frequency: 0.5 - 50 kHz

Beam power: Adjustable, max 50 W

Scribing speed: Adjustable,  max 120 mm/ s

Max scribing depth: 1.2 mm

Min scribing line width: 0.05 mm

Scribing area: 250mm × 250 mm, optional

CNC worktable accuracy: 0.01 mm

Power supply: 1-phase 220 VAC +/- 10%, 50 Hz (A voltage stabilizer might

be required to avoid irregular scribing quality caused by severe voltage fluctuation).

Input power: Max 2 kW

半导体激光划片机基本参数表