【供应雪崩二极管(APD)】价格_厂家

品牌

First Sensor

型号

First Sensor

类型

雪崩二极管

半导体材料

其他

封装方式

SMD

雪崩二极管

新势力光电供应雪崩二极管（APD，Avalanche photodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，新势力光电提供配套的驱动电路模块。

Series 11: Blue sensitivity enhanced (for biomedical applications)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	M=100	410nm 50Ω
	Chip	Package	mm	mm2	nA	ns
500970	AD800-11	TO52S1	Ø0.8	0.5	1	1
500967	AD1900-11	TO5i	Ø1.95	3	5	2
Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	660nm M=100	660nm 50Ω
	Chip	Package	mm	mm2	A/W	GHz
501828	AD100-12	LCC6.1	Ø0.1	0.008	50	typ.3, min.2
501829	AD100-12	LCC6.1f	Ø0.1	0.008	44	typ.3, min.2
501831	AD100-12	TO52S1	Ø0.1	0.008	50	typ.3, min.2
501157	AD230-12	LCC6.1	Ø0.23	0.042	50	typ.3, min.2
501156	AD230-12	LCC6.1f	Ø0.23	0.042	44	typ.3, min.2
501820	AD230-12	LCC6.1f	Ø0.23	0.042	44	typ.3, min.2
501162	AD230-12	TO52S1	Ø0.23	0.042	50	typ.3, min.2
501155	AD500-12	LCC6.1	Ø0.5	0.196	50	typ.3, min.2
501154	AD500-12	LCC6.1f	Ø0.5	0.196	44	typ.3, min.2
501819	AD500-12	LCC6.1f	Ø0.5	0.196	44	typ.3, min.2
501163	AD500-12	TO52S1	Ø0.5	0.196	50	typ.3, min.2
Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	M=100	M=100 20V 50Ω
	Chip	Package	mm	mm2	nA	ns
501810	AD100-8	LCC6.1	Ø0.1	0.008	0.05	<0.18
501811	AD100-8	LCC6.1f	Ø0.1	0.008	0.05	<0.18
501812	AD100-8	LCC6.1f	Ø0.1	0.008	0.05	<0.18
500011	AD100-8	TO52S1	Ø0.1	0.008	0.05	<0.18
501171	AD100-8	TO52S3	Ø0.1	0.008	0.05	<0.18
501078	AD230-8	LCC6.1	Ø0.23	0.04	0.3	0.18
501079	AD230-8	LCC6.1f	Ø0.23	0.04	0.3	0.18
501805	AD230-8	LCC6.1f	Ø0.23	0.04	0.3	0.18
500019	AD230-8	TO52S1	Ø0.23	0.04	0.3	0.18
500022	AD230-8	TO52S3	Ø0.23	0.04	0.3	0.18
501496	AD230-8	ODFN2x2	Ø0.23	0.04	0.3	0.18
501077	AD500-8	LCC6.1	Ø0.5	0.2	0.5	0.35
501076	AD500-8	LCC6.1f	Ø0.5	0.2	0.5	0.35
501809	AD500-8	LCC6.1f	Ø0.5	0.2	0.5	0.35
500030	AD500-8	TO52S1	Ø0.5	0.2	0.5	0.35
500305	AD500-8	TO52S2	Ø0.5	0.2	0.5	0.35
500155	AD500-8	TO52S3	Ø0.5	0.2	0.5	0.35
500947	AD800-8	TO52S1	Ø0.8	0.5	2	0.7
501117	AD1100-8	TO52S1	Ø1.13	1	4-6	1
500015	AD1900-8	TO5i	Ø1.95	3	15	1.4
501194	AD3000-8	TO5i	Ø3	7.07	30	2
500160	AD5000-8	TO8i	Ø5	19.63	60	3
500002	AD230-8-2.3G	TO5	AD230-8-2.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.
500003	AD500-8-1.3G	TO5	AD500-8-1.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.
Series 9: NIR sensitivity enhanced-900nm (specifically for LIDAR and laser rangefinders)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	M=100	M=100
	Chip	Package	mm	mm2	nA	ns
501815	AD100-9	LCC6.1	Ø0.1	0.008	0.1	<0.5
501816	AD100-9	LCC6.1f	Ø0.1	0.008	0.1	<0.5
501123	AD230-9	LCC6.1	Ø0.23	0.04	0.5	0.5
501817	AD230-9	LCC6.1f	Ø0.23	0.04	0.5	0.5
500020	AD230-9	TO52S1	Ø0.23	0.04	0.5	0.5
501265	AD230-9	TO52S1F2	Ø0.23	0.04	0.5	0.5
500023	AD230-9	TO52S3	Ø0.23	0.04	0.5	0.5
501122	AD500-9	LCC6.1	Ø0.5	0.2	0.8	0.55
501818	AD500-9	LCC6.1f	Ø0.5	0.2	0.8	0.55
500031	AD500-9	TO52S1	Ø0.5	0.2	0.8	0.55
500590	AD500-9	TO52S1F2	Ø0.5	0.2	0.8	0.55
500306	AD500-9	TO52S2	Ø0.5	0.2	0.8	0.55
500156	AD500-9	TO52S3	Ø0.5	0.2	0.8	0.55
501196	AD800-9	TO52S1	Ø0.8	0.5	2	0.9
501197	AD1100-9	TO52S1	Ø1.13	1	4	1.3
501208	AD1500-9	TO5i	Ø1.5	1.77	2	2
501198	AD3000-9	TO5i	Ø3	7.07	30	2
500161	AD5000-9	TO8i	Ø5	19.63	60	3
500756	AD230-9-400M	TO5	AD230-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.
500490	AD500-9-400M	TO5	AD500-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.
Multi-Element Array
501099	8AA0.4-9	SOJ22GL	APD Array 8 Elements, QE>80% at 760-910nm with NTC
501098	16AA0.13-9	SOJ22GL	APD Array 16 Elements, QE>80% at 760-910nm with NTC
500038	16AA0.13-9	DIL18	APD Array 16 Elements, QE>80% at 760-910nm
501097	16AA0.4-9	SOJ22GL	APD Array 16 Elements, QE>80% at 760-910nm
50130802	25AA0.04-9	BGA	APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC
50130802	25AA0.16-9	BGA	APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC
50130702	64AA0.04-9	BGA	APD Array 64 (8×8) elements, QE>80% at 760-910nm with PTC
501207	QA4000-9	TO8Si	Quadrant Avalanche Photodiode, QE>80% at 760-910nm
Series 10: NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources)
Order #	Type		Active Area		Dark Current	Rise Time
	Chip	Package	Size	Area	M=100	M=100 1064nm
	Chip	Package	mm	mm2	nA	ns
500953	AD500-10	TO5i	Ø0.5	0.2	1.5	4
501233	AD800-10	TO5i	Ø0.8	0.5	3	5
500883	AD1500-10	TO5i	Ø1.5	1.77	7	5
50123401	AD4000-10	TO8Si	Ø4	12.56	50	6
501387	AD800-10	TO8S	High speed, high gain, low noise, low power consumption hybrid (AD800-10+TIA)
Multi-Element Array
501174	QA4000-10	TO8Si	Quadrant Avalanche Photodiode, High QE at 850-1070nm

/products/components/detectors/avalanche-photodiodes-apd

www.NewOpto.com