A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 μs with δ of 20 %:
Output power = 1200 W
Power gain = 24 dB
Efficiency = 71 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)