830 nm High-Power Laser Diode (AL830T1000)

Features:

Output power: 1w(CW)
Variety of stripe width
Efficient quantum well structure
TO package or C-Mount Package

Application:

Solid-state laser pumping
Medical usage
Beacons and Illumination
Free-space communication
Infrared light sources

Parameter

Value

AL830T1000

CW output power (mW)

1000

Peak wavelength (nm)

830±10

Spectral width (nm)

≤5

Threshold current (A)

≤0.45

Operating current (A)

≤1.2

Operating voltage (V)

≤2.2

Slope efficiency (W/A)

≥1

Beam pergence θ⊥×θ∥(deg.)

≤38×12

Wavelength temperature coefficient (nm/℃)

0.3

Emitting area (μm)

50×1

Serial resistance (Ω)

≤1.5

Polarization mode

TE

Package

TO-5, TO-3, C-Mount