Features
High luminous power(超高亮度).
Green color(绿光).
Bulk, available taped on reel(散装,可带装).
ESD-withstand voltage: up to 4KV(承受静电4KV以上)
The product itself will remain within
RoHS compliant version(产品符合RoHS).
Descriptions
The series is designed for application
required high luminous intensity.(此系列按高流明亮度需求设计)
The phosphor filled in InGaN chip to
deal with.(发光体内置INGaN芯片)
Device Selection
Guide
LED
Part No.(型号) | Chip
Material(芯片材料) | Lens
Color(胶体颜色) |
G503C1435-A | InGaN | Water
clear |
Package
Dimensions
Absolute Maximum Ratings (Ta=25℃) (固定极限额定参数)
Parameter | Symbol | Rating | Unit |
Continuous Forward Current (持续工作电流) | IF | 30 | mA |
Peak Forward Current(峰值电流) | IFP | 1 | A |
Reverse Voltage(反向电压) | VR | 5 | V |
Operating Temperature(工作温度) | Topr | -40 ~ +85 | ℃ |
Storage Temperature(贮存温度) | Tstg | -40 ~ +85 | ℃ |
Soldering Temperature(焊接温度) | Tsol | 260 | ℃ |
Zener Reverse
Current( | Iz | 100 | mA |
Power Dissipation at 25℃Temperature
Free Air (功耗@25℃真空) | Pd | 90 | mW |
Notes: 1:IFP Conditions--Pulse Width≦100μs
and Duty≦1%.
2:Soldering time≦5 seconds.
Electro-Optical Characteristics (Ta=25℃)
Parameter | Symbol | Condition | Min | Typ | Max | Unit |
Forward Current | VF | IF=20mA | 2.8 | -- | 3.6 | V |
Zener Voltage | Vz | Iz=5mA | 5.2 | -- | -- | V |
Reverse Current | IR | VR=5V | -- | -- | 5 | μA |
Luminous Intensity | Iv | IF=20mA | 8000 | -- | 10000 | mcd |
View Angle | 2θ1/2 | IF=20mA | -- | 30 | -- | deg |
Peak Wavelength | λp | IF=20mA | 503 | -- | 505 | nm |