1Overview
Features
• Path resistance of max. 55 mΩ @ 150 °C (typ. 28 mΩ @ 25 °C)
High Side: max. 17 mΩ @ 150 °C (typ. 10 mΩ @ 25 °C)
Low Side: max. 38 mΩ @ 150 °C (typ. 18 mΩ @ 25 °C)
(for BTN7930B (SMD))
• Low quiescent current of typ. 7 μA @ 25 °C
• PWM capability of up to 25 kHz combined with active freewheeling
• Switched mode current limitation for reduced power dissipation
in overcurrent
• Current limitation level of 20 A min. / 32 A typ. (low side)
• Status flag diagnosis with current sense capability
• Overtemperature shut down with latch behaviour
• Overvoltage lock out
• Undervoltage shut down
• Driver circuit with logic level inputs
• Adjustable slew rates for optimized EMI
• Green Product (RoHS compliant)
• AEC Qualified
Description
The BTN7930 is a integrated high current half bridge for motor
drive applications. It is part of the NovalithIC™ family containing one
p-channel highside MOSFET and one n-channel lowside MOSFET with
an integrated driver IC in one package. Due to the p-channel highside
switch the need for a charge pump is eliminated thus minimizing EMI.
Interfacing to a microcontroller is made easy by the integrated driver IC
which features logic level inputs, diagnosis with current sense, slew rate
adjustment, dead time generation and protection against over-
temperature, overvoltage, undervoltage, overcurrent and short circuit.
The BTN7930 provides a cost optimized solution for protected high
current PWM motor drives with very low board space consumption.

ype Package Marking
BTN7930B PG-TO263-7-1 BTN7930B
BTN7930P PG-TO220-7-11 BTN7930P
BTN7930S PG-TO220-7-12 BTN7930S