logic level  gate  drive !  原装正品！

N-Channel MOSFET
©2007 InPower Semiconductor Co., Ltd. FTP11N08 REV. A Feb. 2007
FTP11N08
• Automotive
• DC Motor Control
• Class D Amplifier
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Lead Free Package and Finish
VDSS RDS(ON) (Max.) ID
75V 11 mΩ 100A
Ordering Information
PART NUMBER PACKAGE BRAND
FTP11N08 TO-220 FTP11N08
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol Parameter FTP11N08 Units
VDSS Drain-to-Source Voltage (NOTE *1) 75 V
ID Continuous Drain Current 100*
ID@ 100 A oC Continuous Drain Current Figure 3
IDM Pulsed Drain Current, VGS@ 10V (NOTE *2) Figure 6
PD
Power Dissipation 230 W
Derating Factor above 25 oC 1.54 W/ oC
VGS Gate-to-Source Voltage ± 20 V
EAS
Single Pulse Avalanche Engergy
L=10 mH, ID=11 Amps
600 mJ
IAS Pulsed Avalanche Rating Figure 8
dv/dt Peak Diode Recovery dv/dt (NOTE *3) 3.0 V/ns
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
300
260
oC
TJ and TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units Test Conditions
RθJC Junction-to-Case -- -- 0.65 oC/W
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175 oC.
RθJA Junction-to-Ambient -- -- 62 1 cubic foot chamber, free air.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
*Drain Current limited by Maximum Package Current Rating.
TO-220