Semiconductor laser module of 75W and 1064nm wavelength www.fzlaser.com

The model Nd:YAG (mm) pump power (808nm) of single pulse energy (200us)typical current (A) voltage (V)

GQ9 2-4 900W >30-40mJ 11018

GQ12 2-4 1200W >40-50mJ 11024

GQ15 2-4 1500W >60-70mJ 11030

GQ30 3-5 3KW >120-140mJ 11060

GQ50 3-5 5KW >200-250mJ 110100

GQ50B 3-5 5KW >200-250mJ 20050

GQ100B 4-8 10KW >400-500mJ 200100

GQ200B 4-8 20KW >800-1000mJ 200200

Semiconductor chip can be a linear array package, package, package arranged vertically arranged in an arc, the pump structure to adapt to the different.

Note: the Nd:YAG doping concentration of 0.6 ～ 1.1% optional; single pulse energy defined conditions for the energy of 1064nm pulse at 200 μ s/100Hz cases; conventional design module duty ratio ≤ 5%, high duty need to customize than module; the small signal gain is possible according to the concentration of Nd:YAG, different length and diameter; can be customized to cold water and cooling structure

The MQ series, the Joule level quasi continuous / pulse semiconductor lasermodule

Model Nd:YAG diameter single pulse energy working voltage, peak current

MQ1 5-10mm >1J 250V 200A

MQ2 5-10mm >2J 500V 200A

MQ3 5-10mm >3J 750V 200A

MQ5 5-10mm >5J 1250V 200A

MQ10 5-10mm >10J 2500V 200A