VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-4.1A Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
52m
75mΩ
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -20
Gate-Source Voltage VGS ±12
V
Continuous Drain Current ID -4.1
Pulsed Drain Current 1) IDM -15
A
TA = 25o
Maximum Power Dissipation
TA = 75oC
PD
0.8
W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 oC
Junction-to-Ambient Thermal Resistance (PCB mounted) 3) 166
oC/W
2) 1.25
Junction-to-Ambient Thermal Resistance (PCB mounted) 2) 100
RthJA
Notes
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t  5 sec.
Surface Mounted on FR4 Board.
1)
3)
2)
RDS(ON), Vgs@-2.5V, Ids@-3.0A
- 1 - 2012-7-8
-20V P-Channel Enhancemen t M o d e M O S F E T
SI2305
SOT-23
30 50
80 00
Millimeter M il lim eter
REF.
Min. Max.
REF.
Min. Max.
A 2. 3. G
B 2. 2. H 0.90 1.1
C 1.20 1.40 K 0.10 0.20
D 0.30 0.50 J 0.35
E 0 0.10 L 0.92
F 0.45 0.55 M 0° 10°
D
G S
1.80 2.00
0.70
0.98
ELECTRICAL CHARACTERISTICS
Parameter Test Condition
Static
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250uA -20 V
Drain-Source On-State Resistance RDS(on)
VGS = -4.5V, ID = -4.1A 46 52
VGS = -2.5V, ID = -3.0A 60 75
mΩ
Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA V
Zero Gate Voltage Drain Current 0
VDS = -20V, V GS = 0V -1
Gate Body Leakage IGSS VGS = ± 12V, V DS = 0V ±100 nA
Forward Transconductance gfs VDS = -5V, ID = -3.5A 6.5 S
Dynamic
Total Gate Charge Qg 5.8 10
Gate-Source Charge Qgs 0.85
Gate-Drain Charge Qgd
VDS = -6V, ID -3.5A
VGS = -4.5V
1.7
nC
Turn-On Delay Time td(on) 13 25
Turn-On Rise Time tr 36 60
Turn-Off Delay Time td(off) 42 70
Turn-Off Fall Time tf
VDD = -6V, RL=6Ω
ID -1.A, VGEN = -4.5V
RG = 6
34 60
ns
Input Capacitance Ciss 415
Output Capacitance Coss 223
Reverse Transfer Capacitance Crss
VDS = -6V, VGS = 0V
f = 1.0 MHz
87
pF
Source-Drain Diode
Max. Diode Forward Current IS
Diode Forward Voltage VSD IS = -1.6A, VGS = 0V -1.2 V
Pulse test: pulse width <= 300us, duty cycle<= 2%
IDSS
VDS = -20V, V GS = 0V TJ=55o C -10
uA
Ω
-0.8
1)
1)
1)


Symbol Min. Typ. Max. Unit
-1.6 A
0.4 1
- 2 - 2012-7-8
SI2305
Typical Electrical and Thermal Characteristics
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
VIN
VOUT
10%
10%
50% 50%
PULSE WIDTH
INVERTED
td(on)
90%
tr
ton
90%
10%
toff
td(off) tf
90%
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
Figure 4 Drain Current
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
PD Power(W)
Rdson On-Resistance(Ω) ID- Drain Current (A）
ID- Drain Current (A)
- 3 - 2012-7-8
SI2305
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Figure 11 Gate Charge
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
ID- Drain Current (A)
Vgs Gate-Source Voltage (V) Rdson On-Resistance(Ω)
Is- Reverse Drain Current (A) C Capacitance (pF) Normalized On-Resistance
- 4 - 2012-7-8
SI2305
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
r(t),Normalized Effective
Transient Thermal Impedance
ID- Drain Current (A)
- 5 - 2012-7-8
SI2305

电子元器件厂家：　

负责人：吴经理

电话：0755-29000388