Wafer Square Side: 125x125±0.5mm, 156x156±0.5 mm

Diagonal Length: 150±0.5mm, 200±0.5mm

Growth Method: CZ

Conductivity Type: P-type/boron

Shape Wafer: Quasi-squared

Surface Orientation: ±3o

Dislocation: ≤3000/cm2

Resistivity: 0.5-3 Ω.cm, 3-6Ω.cm

Lifetime: 10 μs min

Carbon Content: ≤1×1017 atoms/cm3

Oxygen Content: ≤1×1018 atoms/cm3

Wafer Thickness: 180/200/240±20μm

Square Side Angle: 90±0.3o

TTV: ≤30 μm

Warp/Bow: ≤50 um, ≤30 um

Saw mark: ≤20 um

Edge Chips: Length≤1.0mm,Depth≤0.5mm, ≤1 ea/wafer

Wafer Surface: As-cut and cleaned

Contamination: No dirt/oil stain/ remains of soap/ glue

Scratch/Cracks/pinhole: No scratch, cracks and pinholes visible with naked eyes

Packing: Wafer is in cassette, carton box outside