A leading supplier for high purity elements, periodic table display samples for research, education and collection - Living science
提供高纯度元素实物！
国家：AUSTRIA 奥地利
产品1：
供应奥地利 Smart-elements高纯度的黑磷！
Black Phosphorus - crystal pieces
高纯度黑磷小晶片 – 氩气保护安培瓶装
包装规格Amount: 35mg, 100mg, 403mg, 500mg, 600mg,
1.0g, 1500mg, 1509mg,
2212mg, 5g, 10g.
产品纯度Purity: ~99.998%
包装材料Packing: ampoule, Argon
High pure black Phosphorus crystals produced by gas phase transport.
Small crystalline pieces from cutting black P - sealed in ampoule.
高纯黑磷晶体 - 高度光泽和非常稳定的晶体，有蓝黑色的金属光泽。从晶体簇中可分离出1 - 2单晶。用透明胶带方法可制作非常薄的“2D层”。这些黑磷晶体样本非常适合半导体实验。
供应奥地利 Smart-elements高纯度的红磷
红磷， 超纯半导体级红磷
Red Phosphorus - 7N semiconductor grade - 99.99999% 0.5g
This is ultrapure semiconductor grade Phosphorus incl. COA
Amount: 0.5g
Purity :99,999999%
产品9：
供应奥地利 Smart-elements 高纯度锑！
Antimony, 99,9999% purity crystalline pieces – 1.5 grams.
锑，99,9999%纯晶片 – 1.5g
高纯度锑，晶莹剔透- 安瓿纯度99.9999%，这种纯度的锑非常稀有，显示出美丽的晶体结构，可用于半导体应用和高级元素收集。
Description
shiny crystalline pieces of high purity antimony – 99.9999% purity in ampoule. Antimony of such purity is very rare and shows beautiful crystalline structure. For semiconductor applications and for the advanced elements collection.
产品10：
磷化硅单晶，o-SiP大块正交磷化硅单晶
性能：铜光泽，红色半透明晶体血小板。空气稳定，浓度稳定。非氧化性酸。熔点~1110–1130°C。
Silicon phosphide single crystals
o-SiP bulk orthorhombic Silicon phosphide single crystals
Properties: Copper-shining, red translucent crystal platelets. Air stable, stable in conc. non-oxidizing acids. Melting point ~ 1110–1130 °C.
Description
o-SiP bulk orthorhombic Silicon phosphide single crystals
Properties: Copper-shining, red translucent crystal platelets. Air stable, stable in conc. non-oxidizing acids. Melting point ~ 1110–1130 °C
Orthorhombic SiP (o-SiP) is a 2D layered crystal and may have a significant impact on optoelectronic technologies. Differentialscanning calorimetry (DSC) and thermogravimetric analysis (TGA) curves show that o-SiP is thermally stable even at a temperature of 1045 °C. This is very important for device fabrication and practical applications. Unlike graphene, o-SiP has an appropriate band gap that is determined to be 1.7 eV. Bulk o-SiP is a p-type semiconductor with a carrier mobility of 2.034 × 103 cm2 V−1 s−1, which is tenfold that of MoS2. The photoresponse properties of o-SiP were investigated by excitation using a 671 nm laser with different powers of 20, 40, 60, 80, 100 and 120 mW, respectively. Its appropriate band gap and high enough carrier mobility, together with clear photoswitching behavior and relatively fast response, make it possible for o-SiP to be a 2D electronic and optoelectronic material.
