电 | 特征（Tamb=25℃ 除非另有说明） |
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参数 |
| Symbol | Test | conditions | MIN | TYP |
| MAX |
| UNIT | |||||
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集电极-基极击穿电压 |
| V(BR)CBO | Ic= 1000μA， IE=0 | 700 |
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| V | ||||||
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集电极发射极击穿电压 |
| V(BR)CEO | Ic= 10 | mA， IB=0 | 400 |
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| V | |||||
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发射极-基极击穿电压 |
| V(BR)EBO | IE= 1000μA， IC=0 | 9 |
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| V | |||||
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集电极截止电流 |
| ICBO | VCB= 700 | V， IE=0 |
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| 1000 |
| µA | |||||
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集电极截止电流 |
| ICEO | VCE= 400 | V， IB=0 |
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| 500 |
| µA | |||||
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发射极电流 |
| IEBO | VEB= 9 | V， IC=0 |
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| 1000 |
| µA | |||||
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| HFE（1） | VCE= 5 V, IC= 0.2 A | 8 |
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直流电流增益 |
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| HFE（2） | VCE= 10 V, IC= 0.5 mA | 5 |
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集电极-发射极饱和电压 |
| VCE(sat) | IC=0.2A,IB= 0.04A |
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| 1 |
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基极-发射极饱和电压 |
| VBE(sat) | IC=0.2A,IB= 0.04A |
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| 1.2 |
| V | ||||||
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基极-发射极电压 |
| VBE | IE= 2000 mA |
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| 3 |
| V | ||||||
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过渡频率 |
| fT | VCE=10V,Ic=100mA | 5 |
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| MHz | |||||
| f =1MHz |
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下降时间 |
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| tf | IC=1A, IB1=-IB2=0.2A |
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| 0.5 |
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| VCC=100V |
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储存时间 |
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| ts |
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| 2.5 |
| µs | |||||
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分类HFE(1) |
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秩 |
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环绕 | 8-15 |
| 15-20 |
| 20-25 |
| 25-30 |
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| 30-35 |
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| 35-40 | ||
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HR13003L
