●Please confirm the product name and specifications with the data sheet again. ●データシートで再度、製品名?仕様をご確認ください。 ●请通过数据表再次确认产品名称与规格。
Product Name	Package	Overcharge	Overcharge	Overdischarge	Overdischarge	Overcharge	Overdischarge	CO Pin
		Detection	Release	Detection	Release	Detection	Detection	Output
		Voltage	Voltage	Voltage	Voltage	Delay Time	Delay Time	Form
		【VCU】	【VCL】	【VDL】	【VDU】	【tCU】	【tDL】
製品名	パッケージ	過充電検出電圧	過充電解除電圧	過放電検出電圧	過放電解除電圧	過充電検出遅延時間	過放電検出遅延時間	CO端子出力形式
S-8211EAC-M5T1U	SOT-23-5	3.600 V	3.600 V	2.00 V	2.00 V	1.2 s	150 ms	CMOS output active “L”
S-8211EAF-M5T1U	SOT-23-5	3.650 V	3.550 V	2.00 V	2.30 V	573 ms	300 ms	CMOS output active “L”
S-8211EAG-M5T1U	SOT-23-5	3.800 V	3.600 V	2.00 V	2.30 V	573 ms	300 ms	CMOS output active “L”
S-8211EAJ-M5T1U	SOT-23-5	4.180 V	4.180 V	2.50 V	3.00 V	1.2 s	150 ms	CMOS output active “H”
S-8211EAK-M5T1U	SOT-23-5	3.600 V	3.600 V	2.00 V	2.30 V	1.2 s	150 ms	CMOS output active “H”
S-8211EAA-I6T1x	SNT-6A	4.220 V	4.220 V	2.00 V	2.00 V	573 ms	300 ms	CMOS output active “L”
S-8211EAB-I6T1x	SNT-6A	4.270 V	4.270 V	2.00 V	2.00 V	573 ms	300 ms	CMOS output active “L”
S-8211EAD-I6T1x	SNT-6A	4.220 V	4.220 V	2.50 V	2.50 V	573 ms	300 ms	CMOS output active “L”
S-8211EAE-I6T1x	SNT-6A	4.220 V	4.220 V	2.30 V	2.30 V	573 ms	300 ms	CMOS output active “L”
S-8211EAH-I6T1U	SNT-6A	4.000 V	3.800 V	3.00 V	3.20 V	1.2 s	150 ms	CMOS output active “L”
S-8211EAI-I6T1U	SNT-6A	3.800 V	3.700 V	2.30 V	2.40 V	1.2 s	150 ms	CMOS output active “L”