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HOT SALE热卖展示 | ¥0.11¥0.12 | | 专业供应三极管
场效应MOS管 40N10 TO-252 ¥0.70¥0.70 | | 合芯半导体大量供应
13003 1.18三极管现货批发 ¥0.13¥0.13 | | | 合芯半导体
现货批发13003系列大功率三极管 ¥0.06¥0.06 | | 三极管D4205D
TO-126封装 用于电子镇流器 节能灯 [厂家直销] ¥0.45¥0.45 | | ¥0.75¥0.75 | | | 专业供应 BU406
TO-220 合芯半导体厂家直销 现货批发 ¥0.52¥0.52 | | 专业供应
T0-92封装功率三极管 1300系列三极管批发 插件三极管 ¥0.06¥0.06 | | 合芯半导体 100-8
SOT-23 单向可控硅 ¥95.00¥95.00 | | |
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13001,TO-92是合芯半导体为充电器厂家生产的功率开关三极管,具有反压高于490v,价格实惠的特征,QQ1336260117
。产品具体参数如下:
LIMMITING
VALUES(Tj=25℃Unless Otherwise
Stated)
Parameter | Symbol | Value | Unit |
Collector-Base
Voltage | VCBO | 600 | V |
Collector-Emitter
Voltage | VCEO | 400 | V |
Emitter-Base
Voltage | VEBO | 7 | V |
Collector
Current | Ic | 0.2 | A |
Total Power
Dissipattion | Pc | 0.65 | W |
Storage
Temperature | Tstg | -65~150 | ℃ |
Junction
Temperature | Tj | 150 | ℃ |
ELECTRICAL
CHARACTERISTICS(Tj=25℃Unless Otherwise
Stated)
Parameter | Symbol | Test
conditions | Min | Max | Unit |
Collector-Base Breakdown
Voltage | BVCBO | Ic=0.5mA,Ie=0 | 600 | | V |
Collector-Emitter Breakdown
Voltage | BVCEO | Ic=10mA,Ib=0 | 400 | | V |
Emitter-Base Breakdown
Voltage | BVEBO | Ie=1mA,Ic=0 | 7 | | V |
Collector-Base Cutoff
Current | ICBO | Vcb=600V,Ie=0 | | 100 | μA |
Collector-
EmitterCutoff Current | ICEO | Vce=400V,Ib=0 | | 20 | μA |
Emitter-Base Cutoff
Current | IEBO | Veb=7V,Ic=0 | | 100 | μA |
DC Current
Gain | hFE | Vce=20V,Ic=20mA | 10 | 40 | |
Collector-Emitter Saturation
Voltage | VCE(sat) | Ic=50mA,Ib=10mA | | 0.6 | V |
Base-Emitter Saturation
Voltage | VBE(sat) | Ic=200mA,Ib=100mA | | 1.2 | V |
Storage
Time | Ts | Ic=0.1mA,
(UI9600) | | 2 | μS |
Falling Time | fT | VCE=20V,Ic=20mA f=1MHZ | 5 | | MHZ |
CLASSIFICATION OF
Hfe(1)
Range | 10-15 | 15-20 | 20-25 | 30-35 |