二手销售/回收/租赁WT-2010D少子寿命测试仪
名称：硅锭载流子寿命测试系统
型号： WT-2010D
品牌： Semilab Rt.
2.设备测试目的，应用
目的：测试半导体硅片体内的重金属沾污
和微缺陷
应用：主要应用于硅锭、硅棒以及硅片的质量
控制、进厂、出厂检查，生产工艺过程
中重金属沾污的监控等。
3.设备的工作原理
原理：采用微波光电导衰减法（SEMI国际标准-1535）的测试原理，主要是通过904nm波长
的激光器，产生红外线注入，激发出硅片体内的非平衡载流子（多余的电子-空穴对），
从而导致样品电导率的增加。当撤去外界红外线注入，样品的电导率随时间指数衰减，这一趋
势反映少数载流子的衰减趋势，通过微波探测器探测样品电导率随时间变化的趋势就可以计算
出少数载流子的复合寿命，以判断该半导体材料的重金属沾污和缺陷情况。
4.设备指标
测试材料: 硅、锗等半导体材料
样片电阻率范围: 0.1 － 1000Ωcm
激光波长: 904nm；光斑直径: 1mm
微波源频率: 可调频率 10.3GHz
测试范围: 100ns － 30ms； 测试分辩率: 0.1%
测试时间: 30ms/数据点； 可以提供单点或连续测试模式
OBJECTIVE: To test the contamination of heavy metals in semiconductor silicon wafers
And micro defects
Applications: Mainly used in the quality of silicon ingots, silicon rods and wafers
Control, Inspection, Production Process
Monitoring of heavy metal contamination, etc.
3. Working Principle of Equipment
Principle: The measurement principle of microwave photoconductivity attenuation method (SEMI international standard - 1535) is adopted, mainly through 904 nm wavelength.
The laser, which generates infrared injection, excites unbalanced carriers (redundant electron-hole pairs) in the silicon wafer.
This leads to an increase in the conductivity of the sample. When the external infrared radiation is removed, the conductivity of the sample decreases exponentially with time.
Potential reflects the decay trend of minority carriers, and can be calculated by detecting the trend of sample conductivity with time by microwave detectors.
The recombination lifetime of a few carriers is given to judge the contamination and defects of heavy metals in the semiconductor material.
4. Equipment Indicators
Testing materials: silicon, germanium and other semiconductor materials
Sample resistivity range: 0.1-1000_cm
Laser wavelength: 904 nm; Spot diameter: 1 mm
Microwave Source Frequency: Adjustable Frequency 10.3GHz
Test range: 100ns-30ms; test resolution: 0.1%
Test time: 30ms/data point; can provide single point or continuous test mode
