The controlling element of a PIN diode is its Intrinsic (l) layer. Diode itself is a sandwich structure, a high resistance l layer between highly doped layers of P and N materials.
With negative bias on the l layer, the PIN diode exhibits very high parallel resistance, and act as a switch in the OFF position. With a positive bias diode exhibits a very low series resistance.
Applications
These devices are most often used to control Radio Frequency (RF) and microwave signals. Typically, high voltage PIN diodes equipped high power switches and phase shifters.
Our high voltage PIN diode products are designed for very high reliability, high power handling capabilities, high isolation, and low signal distortion, especially in the HF and VHF bands.
High power multi-throw switch modules are available for frequencies in 1 MHz to 1 GHz range.
All high voltage PIN diode products can be configured on chips or in various packages: series, shunt, flat mount, stud mount, surface mount (SMD) and non-magnetic on request.
Description
This serie of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltage, junction capacitance and serie resistance to suit a large variety of applications, from 1MHz to several GHz. These diodes are also available in non-magnetic packages. Intrinsic Layer from 50 μm to 200 μm.

Silicon PIN diodes for switching and phase shifting applications