EZESEMI EZE827-MELF
TechnologySilicon PIN Diode
This MELF PIN diode is designed for switch and attenuator applications from HF through UHF frequencies. It has low electrical and thermal resistance and provides higher average ? Hermetically sealed. performance at RF power levels up to 100 Watts ? All solder surfaces are tin plated. CW. It also features low series resistance and low inductance characteristics.
FEATURES
High RF incident power handling capability.
Low Inductance and low series resistance.
Low intermodulation distortion.
MAXIMUM RATINGS
RATING | LIMITS | | UNITS |
VR | VBR | | V |
Pdiss | 1.5 | | W |
TOP | -55 to +175 | | C |
TSTG | -65 to +200 | | C |
TSOLDIER | +260 °C for 5 seconds | |
ELECTRICAL CHARACTERISTICSTC = +25°C
SYMBOL | TEST CONDITIONS | UNITS | MIN | TYP | MAX |
VBR | IR = 10 μA | V | 800 | | |
CT | VR = 100 V F = 1 MHz | pF | | 0.60 | 0.75 |
RS | IF = 100 mA F = 100 MHz | | | 0.40 | 0.50 |
| | IF = 10 mA IREV = 6 mA | μsec | 2.5 | | |
PACKAGE OUTLINE
PACKAGE | DIM | INCHES | MILLIMETERS |
MIN | MAX | MIN | MAX |
| A | 0.080 | 0.090 | 2.030 | 2.290 |
MELF-1 | B | 0.080 | 0.090 | 2.030 | 2.290 |
C | 0.115 | 0.135 | 2.920 | 3.430 |
| D | 0.095 | | 2.415 | |
| A | 0.080 | 0.090 | 2.030 | 2.290 |
MELF-2 | B | 0.080 | 0.090 | 2.030 | 2.290 |
C | 0.115 | 0.135 | 2.920 | 3.430 |
| D | 0.110 | | 2.745 | |
| A | 0.100 | 0.120 | 2.490 | 3.000 |
MELF-3 | B | 0.100 | 0.120 | 2.490 | 3.000 |
C | 0.185 | 0.205 | 4.700 | 5.210 |
| D | 0.130 | | 3.250 | |
| A | 0.140 | 0.155 | 3.510 | 3.940 |
MELF-4 | B | 0.140 | 0.155 | 3.510 | 3.940 |
C | 0.180 | 0.200 | 4.570 | 5.080 |
D | 0.120 | | 3.050 | |
