Our factory can maufacture the IC grade 3 inch silicon wafer
Growth Method CZ
Conductivity Type P/N
Dopant P,B,AS
Resistivity: 0.001 - 1ohm-cm , 1 - 1000 ohm-cm
thickness: customization
Crystal orientation: <110> <111>
surface: no scratch, no saw mark, no chip, no stain
single/double polished
packing Aluminum foil vacuum packing
particle <10 & 0.3um
TTV < 4um
TIR < 4um
bow < 40um
warp <40um
qty 25pcs
william
Jun He electronic material Co.,Ltd
skype william999999william999999
TEL 86-021-58769540
mobile 86-13918726166
websitewww.waferhome.com
