808 nm High-Power Laser Diode (AL808T200)

Features:

Output power: 0.2w(CW)
Variety of stripe width
Efficient quantum well structure

Application:

Solid-state laser pumping
Medical usage
Beacons and Illumination
Free-space communication
Infrared light sources

Parameter

Value

AL808T200

CW output power (mW)

200

Peak wavelength (nm)

808±5

Spectral width (nm)

≤5

Threshold current (A)

≤0.1

Operating current (A)

≤0.45

Operating voltage (V)

1.6~2.2

Slope efficiency (W/A)

≥0.9

Beam pergence θ_⊥×θ_∥(deg.)

12/40

Wavelength temperature coefficient (nm/℃)

0.3

Emitting area (μm)

50×1

Serial resistance (Ω)

≤1.5

Lifetime(h)

10000

Package

TO-18