20V P-Channel Enhancement-Mode MOSFET 20V P沟道增强型MOS管
VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-2.8A = 85mΩ
RDS(ON), Vgs@-2.5V, Ids@-2.0A = 110mΩ
Features特性
Advanced trench process technology高级的加工技术
High Density Cell Design For Ultra Low On-Resistance极低的导通电阻高密度的单元设计![](http://i04.c.aliimg.com/img/ibank/2012/090/166/543661090_114922819.jpg)