20V P-Channel Enhancement-Mode MOSFET 20V P沟道增强型MOS管
VDS= -20V
RDS(ON), Vgs@- 4.5V, Ids@- 4.7A = 60mΩ
RDS(ON), Vgs@-2.5V, Ids@-1.0A = 100mΩ
Features特性
Advanced trench process technology高级的加工技术
High Density Cell Design For Ultra Low On-Resistance极低的导通电阻高密度的单元设计![](http://i01.c.aliimg.com/img/ibank/2012/186/709/539907681_114922819.jpg)