1. Si Wafer : 1”~12”, Single Side Polished & Double Side Polished, P-Type & N-Type, Resistivity: Low (<0.005 ohm-cm, Heavy Doping) / 1000~10000 ohm-cm, FZ Process), Direction : , ,
2. Special Si Wafer : with Thermal Oxides, SOI (Silicon On Insulation)
3. Glass Substrate :CorningE2000 & XG Glass (25~300mm, 0.5~1.1mmThick), Schott D263T, Pyrex, Other Optical Glass (BK7, …)
4. ITO Coated Glass : < 15 ohm/cm2 85%,1200A, 400x370x0.7mm
5. GaAs :2”~6”, Semi-Conductiong / Semi-Insulating, N-Type & P-Type, EPD < 5000 (LED) & < 500 (LD)
6. Sapphire (Al2O3) :2”~6”, C-Plane (for LED) & R-Plane (for HTS), Single Side Polished & Double Side Polished
7. Ge :2”~6”, Semiconducting, N-Type, EPD < 500, 170~350um Thick
8. SiC :2”&3”, Conducting (0.1 ohm-cm) & Semi-Insulating (> 105 ohm-cm), 4H & 6H, C-Plane
9. ZnO : 10x10mm, 20x20mm,1”, C-Plane, Undoped, (10-10) & (11-20), FWHM <30”
10. LiNbO3 & LiTaO3 : for SAW application,2”~4”, X-Y-Z Cut
11. HTS Substrate : LaAlO3, SrTiO3, MgO, Sapphire, MgO, LSAT, YSZ
12. Special Substrate : GaP, InP, GaSb, InSb, InAs, Quartz (SiO2), AlN, NaCl, MgF2, CaF2 ….
北京特博万德科技有限公司提供2英寸/4英寸P型;100晶向，175um厚 单抛/2英寸本征500um/4英寸N,400um；片子光洁，平整度高 。锗有着良好的半导体性质，如电子迁移率、空穴迁移率等等。对固体物理和固体电子学的发展超过重要作用。
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