General Description
MEM2301XG Series P-channel enhancement modefield-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation,and low power dissipation in a very small outline surface mount package.
Features
 -20V/-2.8A
 RDS(ON) =93mΩ@ VGS=-4.5V,ID=-2.8A
 RDS(ON) =113mΩ@ VGS=-2.5V,ID=-2A
 High Density Cell Design For Ultra Low On-Resistance
 Subminiature surface mount package:SOT23

Typical Application
 Power management
 Load switch
 Battery protection