General Description
MEM2302XG Series N-channel enhancement mode field-effect transistor ,produced with high cell densityDMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation in a very small outline surface mount package.
Features
   20V/3A
   RDS(ON) =29mΩ@ VGS=4.5V, ID=3A
   RDS(ON) =36mΩ@ VGS=2.5V, ID=2A
   High Density Cell Design For Ultra Low On-Resistance
   Subminiature surface mount package:SOT23
Typical Application
   Battery management
   High speed switch
   Low power DC to DC converter