General Description

MEM2307XG Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation, and low power dissipation in a very small outline surface mount package.

 Features

 -30V/-4.1A
 RDS(ON)＜88mÙ@ VGS=-10V,ID=-4.1A
 RDS(ON)＜108mÙ@ VGS=-4.5V,ID=-3A
  High Density Cell Design For Ultra Low On-Resistance
  Subminiature surface mount package: SOT23

 Typical Application

 Power management
 Load switch
 Battery protection